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SI7121DN-T1-GE3

MOSFET P-CH 30V 16A 1212-8


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SI7121DN-T1-GE3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 394
  • Description: MOSFET P-CH 30V 16A 1212-8 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -50°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Termination SMD/SMT
ECCN Code EAR99
Resistance 18mOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code S-XDSO-C5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 3.7W Ta 52W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.7W
Case Connection DRAIN
Turn On Delay Time 44 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1960pF @ 15V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Rise Time 100ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±25V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) -16A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 50A
Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 20 mJ
Nominal Vgs -3 V
Height 1.04mm
Length 3.05mm
Width 3.05mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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