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SI7137DP-T1-GE3

MOSFET P-CH 20V 60A PPAK SO-8


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SI7137DP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 811
  • Description: MOSFET P-CH 20V 60A PPAK SO-8 (Kg)

Details

Tags

Parameters
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 1.95mOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 6.25W Ta 104W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 6.25W
Case Connection DRAIN
Turn On Delay Time 100 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.95m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 20000pF @ 10V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 585nC @ 10V
Rise Time 150ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 230 ns
Continuous Drain Current (ID) -60A
Threshold Voltage -1.4V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 42A
Drain to Source Breakdown Voltage -20V
Max Junction Temperature (Tj) 150°C
Nominal Vgs -1.4 V
Height 1.12mm
Length 6.15mm
Width 5.15mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
See Relate Datesheet

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