banner_page

SI7141DP-T1-GE3

MOSFET P-CH 20V 60A PPAK SO-8


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SI7141DP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 204
  • Description: MOSFET P-CH 20V 60A PPAK SO-8 (Kg)

Details

Tags

Parameters
JESD-30 Code R-XDSO-C5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 6.25W Ta 104W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 6.25W
Case Connection DRAIN
Turn On Delay Time 130 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.9m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 14300pF @ 10V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 400nC @ 10V
Rise Time 120ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 55 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) -60A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -20V
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 1.9mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good