Parameters | |
---|---|
ECCN Code | EAR99 |
Vgs (Max) | ±20V |
Resistance | 11mOhm |
Fall Time (Typ) | 100 ns |
Turn-Off Delay Time | 39 ns |
Additional Feature | AVALANCHE RATED |
Continuous Drain Current (ID) | 28A |
Threshold Voltage | 2V |
Technology | MOSFET (Metal Oxide) |
Gate to Source Voltage (Vgs) | 20V |
Terminal Position | DUAL |
Drain to Source Breakdown Voltage | 75V |
Pulsed Drain Current-Max (IDM) | 60A |
Terminal Form | FLAT |
Factory Lead Time | 1 Week |
Dual Supply Voltage | 75V |
Contact Plating | Tin |
Max Junction Temperature (Tj) | 150°C |
Pin Count | 8 |
Mount | Surface Mount |
Nominal Vgs | 2 V |
Mounting Type | Surface Mount |
JESD-30 Code | R-PDSO-F5 |
Turn Off Time-Max (toff) | 90ns |
Package / Case | PowerPAK® SO-8 |
Turn On Time-Max (ton) | 96ns |
Number of Pins | 8 |
Height | 1.17mm |
Length | 4.9mm |
Width | 5.89mm |
Radiation Hardening | No |
Number of Elements | 1 |
REACH SVHC | Unknown |
Weight | 506.605978mg |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Transistor Element Material | SILICON |
Number of Channels | 1 |
Manufacturer Package Identifier | S17-0173-Single |
Power Dissipation-Max | 5.4W Ta 96W Tc |
Operating Temperature | -55°C~150°C TJ |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Packaging | Tape & Reel (TR) |
Power Dissipation | 5.4W |
Case Connection | DRAIN |
Published | 2007 |
Turn On Delay Time | 17 ns |
Series | TrenchFET® |
FET Type | N-Channel |
JESD-609 Code | e3 |
Transistor Application | SWITCHING |
Pbfree Code | yes |
Rds On (Max) @ Id, Vgs | 11m Ω @ 15A, 10V |
Part Status | Active |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 35V |
Current - Continuous Drain (Id) @ 25°C | 28A Tc |
Gate Charge (Qg) (Max) @ Vgs | 100nC @ 10V |
Number of Terminations | 5 |
Rise Time | 255ns |
Termination | SMD/SMT |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |