Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SO-8 |
Number of Pins | 8 |
Weight | 506.605978mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2016 |
Series | TrenchFET® |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Terminal Finish | Pure Matte Tin (Sn) |
Additional Feature | AVALANCHE RATED |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
JESD-30 Code | R-PDSO-F5 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 5.4W Ta 96W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 11m Ω @ 15A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 35V |
Current - Continuous Drain (Id) @ 25°C | 28A Tc |
Gate Charge (Qg) (Max) @ Vgs | 100nC @ 10V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 28A |
Threshold Voltage | 2V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 75V |
Pulsed Drain Current-Max (IDM) | 60A |
Nominal Vgs | 2 V |
Turn Off Time-Max (toff) | 90ns |
Turn On Time-Max (ton) | 96ns |
Radiation Hardening | No |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |