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SI7192DP-T1-GE3

MOSFET N-CH 30V 60A PPAK SO-8


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SI7192DP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 629
  • Description: MOSFET N-CH 30V 60A PPAK SO-8 (Kg)

Details

Tags

Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 5800pF @ 15V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Number of Terminations 5
Termination SMD/SMT
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
ECCN Code EAR99
Rise Time 26ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Resistance 1.9mOhm
Subcategory FET General Purpose Powers
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Fall Time (Typ) 32 ns
Turn-Off Delay Time 86 ns
Terminal Position DUAL
Terminal Form C BEND
Continuous Drain Current (ID) 60A
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Gate to Source Voltage (Vgs) 20V
Pin Count 8
JESD-30 Code R-XDSO-C5
Drain Current-Max (Abs) (ID) 42A
Dual Supply Voltage 30V
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Nominal Vgs 1 V
Height 1.04mm
Number of Channels 1
Length 4.9mm
Power Dissipation-Max 6.25W Ta 104W Tc
Operating Mode ENHANCEMENT MODE
Factory Lead Time 1 Week
Width 5.89mm
Contact Plating Tin
Power Dissipation 6.25W
Radiation Hardening No
Mount Surface Mount
Case Connection DRAIN
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Turn On Delay Time 41 ns
Number of Pins 8
Weight 506.605978mg
REACH SVHC Unknown
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
RoHS Status ROHS3 Compliant
FET Type N-Channel
Packaging Tape & Reel (TR)
Lead Free Lead Free
Transistor Application SWITCHING
Published 2013
Series TrenchFET®
JESD-609 Code e3
Rds On (Max) @ Id, Vgs 1.9m Ω @ 20A, 10V
Pbfree Code yes
Vgs(th) (Max) @ Id 2.5V @ 250μA
Part Status Active
See Relate Datesheet

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