SI7288DP-T1-GE3
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 Dual |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | PowerPAKSO-8 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 19mOhm |
| Subcategory | FET General Purpose Powers |
| Max Power Dissipation | 15.6W |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | SI7288 |
| Pin Count | 8 |
| JESD-30 Code | R-XDSO-C6 |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.6W |
| Case Connection | DRAIN |
| Turn On Delay Time | 12 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 19m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 565pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Rise Time | 14ns |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 16 ns |
| Continuous Drain Current (ID) | 20A |
| Threshold Voltage | 2.8V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 10A |
| Drain to Source Breakdown Voltage | 40V |
| Pulsed Drain Current-Max (IDM) | 50A |
| Avalanche Energy Rating (Eas) | 5 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| Nominal Vgs | 1.2 V |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
