SI7315DN-T1-GE3
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8 |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -50°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | S-PDSO-C5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 3.8W Ta 52W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.8W |
| Case Connection | DRAIN |
| Turn On Delay Time | 8 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 315m Ω @ 2.4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 880pF @ 75V |
| Current - Continuous Drain (Id) @ 25°C | 8.9A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Rise Time | 9ns |
| Drain to Source Voltage (Vdss) | 150V |
| Drive Voltage (Max Rds On,Min Rds On) | 7.5V 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 23 ns |
| Continuous Drain Current (ID) | -8.9A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | -150V |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
