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SI7439DP-T1-E3

MOSFET P-CH 150V 3A PPAK SO-8


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SI7439DP-T1-E3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 248
  • Description: MOSFET P-CH 150V 3A PPAK SO-8 (Kg)

Details

Tags

Parameters
Drain to Source Breakdown Voltage -150V
Additional Feature ULTRA LOW-ON RESISTANCE
Pulsed Drain Current-Max (IDM) 50A
Max Junction Temperature (Tj) 150°C
Height 1.12mm
Subcategory Other Transistors
Length 4.9mm
Technology MOSFET (Metal Oxide)
Width 5.89mm
Terminal Position DUAL
Terminal Form C BEND
Radiation Hardening No
Peak Reflow Temperature (Cel) 260
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) 40
Lead Free Lead Free
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.9W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.9W
Case Connection DRAIN
Factory Lead Time 1 Week
Turn On Delay Time 25 ns
Contact Plating Tin
FET Type P-Channel
Mount Surface Mount
Mounting Type Surface Mount
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 5.2A, 10V
Package / Case PowerPAK® SO-8
Number of Pins 8
Vgs(th) (Max) @ Id 4V @ 250μA
Weight 506.605978mg
Current - Continuous Drain (Id) @ 25°C 3A Ta
Transistor Element Material SILICON
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
Operating Temperature -55°C~150°C TJ
Rise Time 46ns
Packaging Tape & Reel (TR)
Series TrenchFET®
Drain to Source Voltage (Vdss) 150V
JESD-609 Code e3
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Pbfree Code yes
Vgs (Max) ±20V
Fall Time (Typ) 46 ns
Part Status Active
Turn-Off Delay Time 115 ns
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Continuous Drain Current (ID) -5.2A
Threshold Voltage -4V
ECCN Code EAR99
Gate to Source Voltage (Vgs) 20V
Resistance 90mOhm
Drain Current-Max (Abs) (ID) 3A
See Relate Datesheet

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