Parameters | |
---|---|
Drain to Source Breakdown Voltage | -150V |
Additional Feature | ULTRA LOW-ON RESISTANCE |
Pulsed Drain Current-Max (IDM) | 50A |
Max Junction Temperature (Tj) | 150°C |
Height | 1.12mm |
Subcategory | Other Transistors |
Length | 4.9mm |
Technology | MOSFET (Metal Oxide) |
Width | 5.89mm |
Terminal Position | DUAL |
Terminal Form | C BEND |
Radiation Hardening | No |
Peak Reflow Temperature (Cel) | 260 |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Time@Peak Reflow Temperature-Max (s) | 40 |
Lead Free | Lead Free |
Pin Count | 8 |
JESD-30 Code | R-XDSO-C5 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1.9W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.9W |
Case Connection | DRAIN |
Factory Lead Time | 1 Week |
Turn On Delay Time | 25 ns |
Contact Plating | Tin |
FET Type | P-Channel |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 90m Ω @ 5.2A, 10V |
Package / Case | PowerPAK® SO-8 |
Number of Pins | 8 |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Weight | 506.605978mg |
Current - Continuous Drain (Id) @ 25°C | 3A Ta |
Transistor Element Material | SILICON |
Gate Charge (Qg) (Max) @ Vgs | 135nC @ 10V |
Operating Temperature | -55°C~150°C TJ |
Rise Time | 46ns |
Packaging | Tape & Reel (TR) |
Series | TrenchFET® |
Drain to Source Voltage (Vdss) | 150V |
JESD-609 Code | e3 |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Pbfree Code | yes |
Vgs (Max) | ±20V |
Fall Time (Typ) | 46 ns |
Part Status | Active |
Turn-Off Delay Time | 115 ns |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
Continuous Drain Current (ID) | -5.2A |
Threshold Voltage | -4V |
ECCN Code | EAR99 |
Gate to Source Voltage (Vgs) | 20V |
Resistance | 90mOhm |
Drain Current-Max (Abs) (ID) | 3A |