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SI7439DP-T1-GE3

MOSFET P-CH 150V 3A PPAK SO-8


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SI7439DP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 408
  • Description: MOSFET P-CH 150V 3A PPAK SO-8 (Kg)

Details

Tags

Parameters
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3A Ta
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
Rise Time 46ns
Factory Lead Time 1 Week
Mount Surface Mount
Drain to Source Voltage (Vdss) 150V
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Weight 506.605978mg
Vgs (Max) ±20V
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Fall Time (Typ) 46 ns
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Turn-Off Delay Time 115 ns
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Continuous Drain Current (ID) -5.2A
Threshold Voltage -4V
ECCN Code EAR99
Gate to Source Voltage (Vgs) 20V
Resistance 90mOhm
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature ULTRA LOW-ON RESISTANCE
Drain Current-Max (Abs) (ID) 3A
Subcategory Other Transistors
Drain to Source Breakdown Voltage -150V
Technology MOSFET (Metal Oxide)
Pulsed Drain Current-Max (IDM) 50A
Terminal Position DUAL
Max Junction Temperature (Tj) 150°C
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Nominal Vgs -4 V
Time@Peak Reflow Temperature-Max (s) 30
Height 1.12mm
Pin Count 8
Length 4.9mm
JESD-30 Code R-XDSO-C5
Width 5.89mm
Number of Elements 1
Radiation Hardening No
Number of Channels 1
Power Dissipation-Max 1.9W Ta
REACH SVHC No SVHC
Element Configuration Single
RoHS Status ROHS3 Compliant
Operating Mode ENHANCEMENT MODE
Lead Free Lead Free
Power Dissipation 1.9W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 5.2A, 10V
See Relate Datesheet

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