SI7485DP-T1-E3
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 |
| Number of Pins | 8 |
| Packaging | Cut Tape (CT) |
| Published | 2011 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Resistance | 7.3mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.8W |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 8 |
| JESD-30 Code | R-XDSO-C5 |
| Number of Elements | 1 |
| Voltage | 20V |
| Element Configuration | Single |
| Current | 20A |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.8W |
| Case Connection | DRAIN |
| Turn On Delay Time | 80 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 7.3m Ω @ 20A, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 1mA |
| Current - Continuous Drain (Id) @ 25°C | 12.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 150nC @ 5V |
| Rise Time | 140ns |
| Fall Time (Typ) | 170 ns |
| Turn-Off Delay Time | 360 ns |
| Continuous Drain Current (ID) | -20A |
| Threshold Voltage | -900mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | 20V |
| Nominal Vgs | -900 mV |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
