banner_page

SI7489DP-T1-E3

MOSFET 100V 28A 83W


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SI7489DP-T1-E3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 938
  • Description: MOSFET 100V 28A 83W (Kg)

Details

Tags

Parameters
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 41m Ω @ 7.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 50V
Current - Continuous Drain (Id) @ 25°C 28A Tc
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Rise Time 160ns
Factory Lead Time 1 Week
Drain to Source Voltage (Vdss) 100V
Mount Surface Mount
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package / Case PowerPAK® SO-8
Fall Time (Typ) 100 ns
Number of Pins 8
Turn-Off Delay Time 110 ns
Weight 506.605978mg
Continuous Drain Current (ID) -28A
Transistor Element Material SILICON
Threshold Voltage -3V
Manufacturer Package Identifier S17-0173-Single
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Operating Temperature -55°C~150°C TJ
Pulsed Drain Current-Max (IDM) 40A
Packaging Tape & Reel (TR)
Published 2005
Max Junction Temperature (Tj) 150°C
Series TrenchFET®
Turn On Time-Max (ton) 55ns
JESD-609 Code e3
Pbfree Code yes
Height 1.12mm
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Length 4.9mm
Number of Terminations 5
Width 5.89mm
ECCN Code EAR99
Resistance 41mOhm
REACH SVHC Unknown
Terminal Finish Matte Tin (Sn)
RoHS Status ROHS3 Compliant
Technology MOSFET (Metal Oxide)
Lead Free Lead Free
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5.2W Ta 83W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5.2W
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good