Parameters | |
---|---|
Avalanche Energy Rating (Eas) | 45 mJ |
Factory Lead Time | 1 Week |
Time@Peak Reflow Temperature-Max (s) | 30 |
Height | 1.04mm |
Mount | Surface Mount |
Length | 4.9mm |
Pin Count | 8 |
Mounting Type | Surface Mount |
Width | 5.89mm |
JESD-30 Code | R-XDSO-C5 |
Package / Case | PowerPAK® SO-8 |
Radiation Hardening | No |
Number of Elements | 1 |
REACH SVHC | Unknown |
Number of Pins | 8 |
RoHS Status | ROHS3 Compliant |
Number of Channels | 1 |
Lead Free | Lead Free |
Weight | 506.605978mg |
Power Dissipation-Max | 5W Ta 48W Tc |
Transistor Element Material | SILICON |
Element Configuration | Single |
Operating Temperature | -55°C~150°C TJ |
Operating Mode | ENHANCEMENT MODE |
Packaging | Tape & Reel (TR) |
Power Dissipation | 5W |
Published | 2008 |
Case Connection | DRAIN |
Series | TrenchFET® |
Turn On Delay Time | 30 ns |
FET Type | N-Channel |
JESD-609 Code | e3 |
Rds On (Max) @ Id, Vgs | 5.4m Ω @ 15A, 10V |
Pbfree Code | yes |
Vgs(th) (Max) @ Id | 2.6V @ 250μA |
Part Status | Active |
Input Capacitance (Ciss) (Max) @ Vds | 3150pF @ 15V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Current - Continuous Drain (Id) @ 25°C | 40A Tc |
Number of Terminations | 5 |
Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
ECCN Code | EAR99 |
Rise Time | 12ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Resistance | 5.4mOhm |
Fall Time (Typ) | 12 ns |
Turn-Off Delay Time | 34 ns |
Terminal Finish | MATTE TIN |
Continuous Drain Current (ID) | 22.5A |
Subcategory | FET General Purpose Power |
Threshold Voltage | 1.4V |
Technology | MOSFET (Metal Oxide) |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 40A |
Terminal Position | DUAL |
Drain to Source Breakdown Voltage | 30V |
Terminal Form | C BEND |
Peak Reflow Temperature (Cel) | 260 |
Pulsed Drain Current-Max (IDM) | 70A |