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SI7655ADN-T1-GE3

MOSFET -20V .0036ohm@-10V -40A P-Ch T-FET


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SI7655ADN-T1-GE3
  • Package: PowerPAK® 1212-8S
  • Datasheet: PDF
  • Stock: 934
  • Description: MOSFET -20V .0036ohm@-10V -40A P-Ch T-FET (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8S
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -50°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 3mOhm
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-C5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 4.8W Ta 57W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 45 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 10V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V
Rise Time 45ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) -40A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Avalanche Energy Rating (Eas) 20 mJ
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet

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