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SI7812DN-T1-E3

MOSFET N-CH 75V 16A 1212-8


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SI7812DN-T1-E3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 449
  • Description: MOSFET N-CH 75V 16A 1212-8 (Kg)

Details

Tags

Parameters
Power Dissipation 3.8W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 37m Ω @ 7.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 35V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 7.2A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Pulsed Drain Current-Max (IDM) 25A
Max Junction Temperature (Tj) 150°C
Height 1.12mm
Length 3.05mm
Width 3.05mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 37mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code S-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.8W Ta 52W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
See Relate Datesheet

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