Parameters | |
---|---|
Nominal Vgs | 2 V |
Height | 1.12mm |
Length | 4.9mm |
Width | 5.89mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SO-8 |
Number of Pins | 8 |
Weight | 506.605978mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2011 |
Series | TrenchFET® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Resistance | 16.5mOhm |
Additional Feature | FAST SWITCHING |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | C BEND |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 8 |
JESD-30 Code | R-XDSO-C5 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1.9W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.9W |
Case Connection | DRAIN |
Turn On Delay Time | 17 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 16.5m Ω @ 10A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA (Min) |
Current - Continuous Drain (Id) @ 25°C | 7.6A Ta |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
Rise Time | 11ns |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 11 ns |
Turn-Off Delay Time | 40 ns |
Continuous Drain Current (ID) | 12.5A |
Threshold Voltage | 2V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 7.6A |
Drain to Source Breakdown Voltage | 80V |
Pulsed Drain Current-Max (IDM) | 50A |
Max Junction Temperature (Tj) | 150°C |