banner_page

SI7868ADP-T1-E3

Trans MOSFET N-CH 20V 35A 8-Pin PowerPAK SO T/R


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SI7868ADP-T1-E3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 944
  • Description: Trans MOSFET N-CH 20V 35A 8-Pin PowerPAK SO T/R (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 2.25mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5.4W Ta 83W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5.4W
Case Connection DRAIN
Turn On Delay Time 28 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.25m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 1.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6110pF @ 10V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Rise Time 120ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 58 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 35A
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 70A
Avalanche Energy Rating (Eas) 45 mJ
Nominal Vgs 600 mV
Height 1.04mm
Length 4.9mm
Width 5.89mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good