SI7898DP-T1-E3
| Parameters | |
|---|---|
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.9W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.9W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 85m Ω @ 3.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Current - Continuous Drain (Id) @ 25°C | 3A Ta |
| Factory Lead Time | 1 Week |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
| Contact Plating | Tin |
| Rise Time | 10ns |
| Mount | Surface Mount |
| Drain to Source Voltage (Vdss) | 150V |
| Mounting Type | Surface Mount |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Package / Case | PowerPAK® SO-8 |
| Vgs (Max) | ±20V |
| Number of Pins | 8 |
| Fall Time (Typ) | 10 ns |
| Weight | 506.605978mg |
| Turn-Off Delay Time | 24 ns |
| Transistor Element Material | SILICON |
| Continuous Drain Current (ID) | 3A |
| Threshold Voltage | 2V |
| Operating Temperature | -55°C~150°C TJ |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 3A |
| Pulsed Drain Current-Max (IDM) | 25A |
| Packaging | Tape & Reel (TR) |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | 4 V |
| Published | 2016 |
| Height | 1.12mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Width | 5.89mm |
| Radiation Hardening | No |
| Pbfree Code | yes |
| Part Status | Active |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free | Lead Free |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Resistance | 85mOhm |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 8 |
| JESD-30 Code | R-XDSO-C5 |
See Relate Datesheet
