SI8402DB-T1-E1
| Parameters | |
|---|---|
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 37MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 1.47W |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | BALL |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.47W |
| Turn On Delay Time | 30 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 37m Ω @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Current - Continuous Drain (Id) @ 25°C | 5.3A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 4.5V |
| Rise Time | 145ns |
| Fall Time (Typ) | 145 ns |
| Turn-Off Delay Time | 45 ns |
| Continuous Drain Current (ID) | 7.3A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 5.3A |
| Drain to Source Breakdown Voltage | 20V |
| Height | 355.6μm |
| Length | 1.5748mm |
| Width | 1.6002mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 4-XFBGA, CSPBGA |
| Number of Pins | 4 |
| Packaging | Cut Tape (CT) |
| Published | 2016 |
| Series | TrenchFET® |
See Relate Datesheet
