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SI8410DB-T2-E1

VISHAY SI8410DB-T2-E1 MOSFET, N-CH, 20V, 5.7A, TRENCHFET-4


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SI8410DB-T2-E1
  • Package: 4-UFBGA
  • Datasheet: PDF
  • Stock: 301
  • Description: VISHAY SI8410DB-T2-E1 MOSFET, N-CH, 20V, 5.7A, TRENCHFET-4 (Kg)

Details

Tags

Parameters
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 30mOhm
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 780mW Ta 1.8W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 37m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 16nC @ 8V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Continuous Drain Current (ID) 5.7A
Threshold Voltage 850mV
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-UFBGA
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
See Relate Datesheet

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