SI8429DB-T1-E1
| Parameters | |
|---|---|
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.77W Ta 6.25W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.77W |
| Turn On Delay Time | 12 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 35m Ω @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 800mV @ 250μA |
| Factory Lead Time | 1 Week |
| Input Capacitance (Ciss) (Max) @ Vds | 1640pF @ 4V |
| Current - Continuous Drain (Id) @ 25°C | 11.7A Tc |
| Contact Plating | Copper, Silver, Tin |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 5V |
| Mount | Surface Mount |
| Rise Time | 25ns |
| Drain to Source Voltage (Vdss) | 8V |
| Mounting Type | Surface Mount |
| Drive Voltage (Max Rds On,Min Rds On) | 1.2V 4.5V |
| Vgs (Max) | ±5V |
| Fall Time (Typ) | 155 ns |
| Package / Case | 4-XFBGA, CSPBGA |
| Turn-Off Delay Time | 260 ns |
| Continuous Drain Current (ID) | -10.2A |
| Number of Pins | 4 |
| Threshold Voltage | -600mV |
| Gate to Source Voltage (Vgs) | 5V |
| Drain Current-Max (Abs) (ID) | 7.8A |
| Drain to Source Breakdown Voltage | -8V |
| Transistor Element Material | SILICON |
| Pulsed Drain Current-Max (IDM) | 25A |
| Height | 360μm |
| Length | 1.6mm |
| Operating Temperature | -55°C~150°C TJ |
| Width | 1.6mm |
| Radiation Hardening | No |
| Packaging | Tape & Reel (TR) |
| REACH SVHC | Unknown |
| Published | 2011 |
| RoHS Status | ROHS3 Compliant |
| Series | TrenchFET® |
| Lead Free | Lead Free |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 35mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | UNSPECIFIED |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
See Relate Datesheet
