SI8461DB-T2-E1
| Parameters | |
|---|---|
| Element Configuration | Single |
| Operating Temperature | -55°C~150°C TJ |
| Operating Mode | ENHANCEMENT MODE |
| Packaging | Tape & Reel (TR) |
| Power Dissipation | 780mW |
| Published | 2013 |
| Turn On Delay Time | 15 ns |
| FET Type | P-Channel |
| Series | TrenchFET® |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 1.5A, 4.5V |
| JESD-609 Code | e3 |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Pbfree Code | yes |
| Input Capacitance (Ciss) (Max) @ Vds | 610pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 8V |
| Part Status | Obsolete |
| Rise Time | 25ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 35 ns |
| Continuous Drain Current (ID) | -3.7A |
| Threshold Voltage | -1V |
| Number of Terminations | 4 |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 2.5A |
| ECCN Code | EAR99 |
| Drain to Source Breakdown Voltage | -20V |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| Resistance | 100mOhm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | BALL |
| Factory Lead Time | 1 Week |
| Peak Reflow Temperature (Cel) | 260 |
| Mount | Surface Mount |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 4 |
| Mounting Type | Surface Mount |
| Package / Case | 4-XFBGA, CSPBGA |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Number of Pins | 4 |
| Power Dissipation-Max | 780mW Ta 1.8W Tc |
| Transistor Element Material | SILICON |
See Relate Datesheet
