SI8483DB-T2-E1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-UFBGA |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | BALL |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.77W Ta 13W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.77W |
| Turn On Delay Time | 20 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 26m Ω @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id | 800mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1840pF @ 6V |
| Current - Continuous Drain (Id) @ 25°C | 16A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
| Rise Time | 20ns |
| Drain to Source Voltage (Vdss) | 12V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
| Vgs (Max) | ±10V |
| Fall Time (Typ) | 20 ns |
| Turn-Off Delay Time | 80 ns |
| Continuous Drain Current (ID) | -16A |
| Threshold Voltage | -400mV |
| Gate to Source Voltage (Vgs) | 10V |
| Drain-source On Resistance-Max | 0.035Ohm |
| Pulsed Drain Current-Max (IDM) | 25A |
| Height | 310μm |
| Length | 1.5mm |
| Width | 1mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
