SI8489EDB-T2-E1
| Parameters | |
|---|---|
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| Series | TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | BALL |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 780mW Ta 1.8W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.8W |
| Turn On Delay Time | 27 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 44m Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 765pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Rise Time | 20ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 10V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 25 ns |
| Turn-Off Delay Time | 50 ns |
| Continuous Drain Current (ID) | 5.4A |
| Gate to Source Voltage (Vgs) | 12V |
| Factory Lead Time | 1 Week |
| Drain to Source Breakdown Voltage | -20V |
| Contact Plating | Tin |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 4-UFBGA |
| Number of Pins | 4 |
See Relate Datesheet
