SI8812DB-T2-E1
| Parameters | |
|---|---|
| FET Type | N-Channel |
| Factory Lead Time | 1 Week |
| Transistor Application | SWITCHING |
| Mount | Surface Mount |
| Rds On (Max) @ Id, Vgs | 59m Ω @ 1A, 4.5V |
| Mounting Type | Surface Mount |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 8V |
| Package / Case | 4-UFBGA |
| Drain to Source Voltage (Vdss) | 20V |
| Number of Pins | 4 |
| Drive Voltage (Max Rds On,Min Rds On) | 1.2V 4.5V |
| Transistor Element Material | SILICON |
| Vgs (Max) | ±5V |
| Continuous Drain Current (ID) | 3.2A |
| Operating Temperature | -55°C~150°C TJ |
| Gate to Source Voltage (Vgs) | 8V |
| Drain-source On Resistance-Max | 0.065Ohm |
| DS Breakdown Voltage-Min | 20V |
| Packaging | Digi-Reel® |
| RoHS Status | ROHS3 Compliant |
| Published | 2016 |
| Lead Free | Lead Free |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | BALL |
| Reach Compliance Code | unknown |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 500mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 900mW |
See Relate Datesheet
