SI8816EDB-T2-E1
| Parameters | |
|---|---|
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Pure Matte Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | BALL |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Power Dissipation-Max | 500mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 109m Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id | 1.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 195pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
| Rise Time | 20ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 10V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 2.3A |
| Threshold Voltage | 600mV |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 1.5A |
| Drain-source On Resistance-Max | 0.123Ohm |
| Drain to Source Breakdown Voltage | 30V |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 4-XFBGA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2015 |
| Series | TrenchFET® |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
See Relate Datesheet
