SI8851EDB-T2-E1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 30-XFBGA |
| Number of Pins | 30 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| Series | TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 30 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | BALL |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | SI8851 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 660mW Ta |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 35 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 8m Ω @ 7A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 6900pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 7.7A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 180nC @ 8V |
| Rise Time | 40ns |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 35 ns |
| Turn-Off Delay Time | 115 ns |
| Continuous Drain Current (ID) | 16.7A |
| Threshold Voltage | -1V |
| Gate to Source Voltage (Vgs) | 8V |
| Drain-source On Resistance-Max | 0.0086Ohm |
| Drain to Source Breakdown Voltage | 20V |
| Pulsed Drain Current-Max (IDM) | 80A |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
