SI9910DJ-E3
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | 8-DIP (0.300, 7.62mm) |
| Number of Pins | 8 |
| Weight | 930.006106mg |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 2014 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 100mOhm |
| Terminal Finish | MATTE TIN |
| Subcategory | MOSFET Drivers |
| Max Power Dissipation | 700mW |
| Technology | BICMOS |
| Voltage - Supply | 10.8V~16.5V |
| Terminal Position | DUAL |
| Number of Functions | 1 |
| Terminal Pitch | 2.54mm |
| Base Part Number | SI9910 |
| Pin Count | 8 |
| Max Output Current | 1A |
| Operating Supply Current | 500μA |
| Power Dissipation | 700mW |
| Output Current | 1A |
| Max Supply Current | 500μA |
| Propagation Delay | 135 ns |
| Input Type | Non-Inverting |
| Turn On Delay Time | 135 ns |
| Rise Time | 50ns |
| Drain to Source Voltage (Vdss) | 16.5V |
| Fall Time (Typ) | 35 ns |
| Rise / Fall Time (Typ) | 50ns 35ns |
| Interface IC Type | BUFFER OR INVERTER BASED MOSFET DRIVER |
| Channel Type | Single |
| Number of Drivers | 1 |
| Input Bias Current | 1μA |
| Output Peak Current Limit-Nom | 1A |
| Driven Configuration | High-Side |
| Gate Type | N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 1A 1A |
| High Side Driver | YES |
| High Side Voltage - Max (Bootstrap) | 500V |
| Height | 3.81mm |
| Length | 10.92mm |
| Width | 7.11mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
SI9910DJ-E3 Overview
The 8-DIP (0.300, 7.62mm) package provides greater flexibility.Tube is the form of the package.Gate drivers is configured wGate driversh 1 drivers.The device is mounted in the direction of Through Hole.By using 10.8V~16.5V supply voltage, it is able to demonstrate its superiority.Gate drivers is designed wGate driversh a N-Channel MOSFET gate.This device can operate at temperatures up to -40°C~150°C TJ.A type of Non-Inverting is used for input in this program.The configuration starts with 8 terminations.Mosfet driver contains a variety of related parts under Mosfet drivers base part number SI9910.In this case, Through Hole indicates how the device is mounted.In the device, there are 8 pins.Its interface IC is BUFFER OR INVERTER BASED MOSFET DRIVER.An output current as high as 1A can be achieved at maximum power.In this subcategory of MOSFET Drivers, there are numerous useful electronic components.Components with 8 pins are available.Mosfet driver is possible to set the high-side voltage - Max (Bootstrap) to 500V.The device is capable of delivering a current of 1A.Its maximum power dissipation of 700mW shows its power loss capacity without overheating.The supply current should be kept at 500μA to ensure higher stability.The supply voltage is 500μA.This device requires a resistance value of 100mOhm.
SI9910DJ-E3 Features
Embedded in the Tube package
1 drivers
Employing a gate type of N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 500V
Maximum power dissipation of 700mW
Resistance of 100mOhm
SI9910DJ-E3 Applications
There are a lot of Vishay Siliconix SI9910DJ-E3 gate drivers applications.
- Commercial and agricultural vehicles (CAV)
- Uninterruptible Power Supplies (UPS)
- Multicolor LED/laser displays
- A/D drivers
- LCD/LCoS/DLP portable and embedded pico projectors
- Portable Media Players
- Portable Navigation Devices
- Active Clamp Flyback or Forward and Synchronous Rectifier
- Line drivers
- High power buffers
