Parameters | |
---|---|
Rise Time | 10ns |
Drive Voltage (Max Rds On,Min Rds On) | 1.2V 4.5V |
Vgs (Max) | ±5V |
Fall Time (Typ) | 8 ns |
Turn-Off Delay Time | 30 ns |
Continuous Drain Current (ID) | 12A |
Threshold Voltage | 350mV |
Gate to Source Voltage (Vgs) | 5V |
Drain-source On Resistance-Max | 0.0094Ohm |
Drain to Source Breakdown Voltage | 8V |
Pulsed Drain Current-Max (IDM) | 50A |
Height | 750μm |
Length | 2.05mm |
Width | 2.05mm |
Radiation Hardening | No |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SC-70-6 |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Digi-Reel® |
Published | 2013 |
Series | TrenchFET® |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
JESD-30 Code | S-PDSO-N3 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 3.5W Ta 19W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3.5W |
Case Connection | DRAIN |
Turn On Delay Time | 11 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 9.4m Ω @ 15.7A, 4.5V |
Vgs(th) (Max) @ Id | 800mV @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1508pF @ 4V |
Current - Continuous Drain (Id) @ 25°C | 12A Tc |
Gate Charge (Qg) (Max) @ Vgs | 25.2nC @ 5V |