SIA441DJ-T1-GE3
| Parameters | |
|---|---|
| Vgs(th) (Max) @ Id | 2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 890pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 12A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| Drain to Source Voltage (Vdss) | 40V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 6.6A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.047Ohm |
| Drain to Source Breakdown Voltage | -40V |
| Pulsed Drain Current-Max (IDM) | 30A |
| Avalanche Energy Rating (Eas) | 8.5 mJ |
| Nominal Vgs | -1.2 V |
| Height | 750μm |
| Length | 2.05mm |
| Width | 2.05mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SC-70-6 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| Series | TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Pin Count | 6 |
| JESD-30 Code | S-PDSO-N3 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 19W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.5W |
| Case Connection | DRAIN |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 47m Ω @ 4.4A, 10V |
See Relate Datesheet
