banner_page

SIA459EDJ-T1-GE3

Trans MOSFET P-CH 20V 7.4A 6-Pin PowerPAK SC-70 T/R


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SIA459EDJ-T1-GE3
  • Package: PowerPAK® SC-70-6
  • Datasheet: PDF
  • Stock: 854
  • Description: Trans MOSFET P-CH 20V 7.4A 6-Pin PowerPAK SC-70 T/R (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -50°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 28mOhm
Terminal Finish Matte Tin (Sn) - annealed
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.9W Ta 15.6W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 885pF @ 10V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 25ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) -9A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 9A
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 40A
Height 750μm
Length 2.05mm
Width 2.05mm
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good