SIA817EDJ-T1-GE3
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2013 |
| Series | LITTLE FOOT® |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 1.9W Ta 6.5W Tc |
| Element Configuration | Dual |
| Power Dissipation | 6.5W |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 65m Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id | 1.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Rise Time | 20ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 10V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 23 ns |
| Continuous Drain Current (ID) | 4.5A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | -30V |
| FET Feature | Schottky Diode (Isolated) |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
