banner_page

SIB456DK-T1-GE3

VISHAY SIB456DK-T1-GE3 MOSFET Transistor, N Channel, 6.3 A, 100 V, 0.153 ohm, 10 V, 1.6 V


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SIB456DK-T1-GE3
  • Package: PowerPAK® SC-75-6L
  • Datasheet: PDF
  • Stock: 176
  • Description: VISHAY SIB456DK-T1-GE3 MOSFET Transistor, N Channel, 6.3 A, 100 V, 0.153 ohm, 10 V, 1.6 V (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SC-75-6L
Number of Pins 6
Weight 95.991485mg
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Published 2013
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 185MOhm
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 2.4W Ta 13W Tc
Element Configuration Single
Power Dissipation 2.4W
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 185m Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 130pF @ 50V
Current - Continuous Drain (Id) @ 25°C 6.3A Tc
Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V
Rise Time 45ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 6.3A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Height 800μm
Length 1.7mm
Width 1.7mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good