SIB457EDK-T1-GE3
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SC-75-6L |
| Number of Pins | 6 |
| Weight | 95.991485mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | TrenchFET® |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 35mOhm |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 6 |
| JESD-30 Code | S-XDSO-N3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.4W Ta 13W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.4W |
| Case Connection | DRAIN |
| Turn On Delay Time | 340 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 35m Ω @ 4.8A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Current - Continuous Drain (Id) @ 25°C | 9A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 8V |
| Rise Time | 900ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 1.9 μs |
| Turn-Off Delay Time | 3 μs |
| Continuous Drain Current (ID) | -9A |
| Threshold Voltage | -1V |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 9A |
| Pulsed Drain Current-Max (IDM) | 25A |
| DS Breakdown Voltage-Min | 20V |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
