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SIDC10D120H8X1SA2

DIODE GEN PURP 1.2KV 15A WAFER


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-SIDC10D120H8X1SA2
  • Package: Die
  • Datasheet: PDF
  • Stock: 805
  • Description: DIODE GEN PURP 1.2KV 15A WAFER (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case Die
Surface Mount YES
Diode Element Material SILICON
Packaging Bulk
Published 2010
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 1
ECCN Code EAR99
HTS Code 8541.10.00.40
Terminal Position UPPER
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-XUUC-N1
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 27μA @ 1200V
Voltage - Forward (Vf) (Max) @ If 1.97V @ 7.5A
Operating Temperature - Junction -40°C~175°C
Application FAST SOFT RECOVERY
Voltage - DC Reverse (Vr) (Max) 1200V
Current - Average Rectified (Io) 15A DC
Number of Phases 1
Rep Pk Reverse Voltage-Max 1200V
Reverse Current-Max 27μA
RoHS Status ROHS3 Compliant
See Relate Datesheet

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