SIE810DF-T1-E3
| Parameters | |
|---|---|
| Continuous Drain Current (ID) | 60A |
| Threshold Voltage | 1.3V |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 45A |
| Drain to Source Breakdown Voltage | 20V |
| Avalanche Energy Rating (Eas) | 36 mJ |
| Factory Lead Time | 1 Week |
| Height | 800μm |
| Length | 6.15mm |
| Mount | Surface Mount |
| Width | 5.16mm |
| Radiation Hardening | No |
| Mounting Type | Surface Mount |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Package / Case | 10-PolarPAK® (L) |
| Number of Pins | 10 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 20MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 10 |
| JESD-30 Code | R-XDSO-N4 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 5.2W Ta 125W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 125mW |
| Case Connection | DRAIN |
| Turn On Delay Time | 20 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.4m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 13000pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 60A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 300nC @ 10V |
| Rise Time | 70ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 10V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 100 ns |
See Relate Datesheet
