SIGC100T65R3EX1SA2
| Parameters | |
|---|---|
| Subcategory | Insulated Gate BIP Transistors |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Input Type | Standard |
| Halogen Free | Halogen Free |
| Drain to Source Voltage (Vdss) | 650V |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 650V |
| Max Dual Supply Voltage | 650V |
| Current - Collector (Ic) (Max) | 200A |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 200A |
| IGBT Type | Trench Field Stop |
| Current - Collector Pulsed (Icm) | 600A |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.4V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Operating Temperature | -40°C~175°C TJ |
| Published | 2016 |
| Series | TrenchStop™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
See Relate Datesheet
