SIHA14N60E-E3
| Parameters | |
|---|---|
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 309m Ω @ 7A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1205pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 13A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 64nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Turn-Off Delay Time | 35 ns |
| Continuous Drain Current (ID) | 13A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 30V |
| Drain-source On Resistance-Max | 0.309Ohm |
| Drain to Source Breakdown Voltage | 600V |
| Pulsed Drain Current-Max (IDM) | 32A |
| Max Junction Temperature (Tj) | 150°C |
| Height | 18.1mm |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | E |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Technology | MOSFET (Metal Oxide) |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 147W Tc |
| Power Dissipation | 147W |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
See Relate Datesheet
