SIHB33N60EF-GE3
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Weight | 1.946308g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2015 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 278W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 28 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 98m Ω @ 16.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3454pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 33A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 155nC @ 10V |
| Rise Time | 43ns |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 48 ns |
| Turn-Off Delay Time | 161 ns |
| Continuous Drain Current (ID) | 33A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.098Ohm |
| DS Breakdown Voltage-Min | 600V |
| Height | 4.83mm |
| Length | 10.67mm |
| Width | 9.65mm |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
