SIHF15N65E-GE3
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2014 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 1 |
| Power Dissipation-Max | 34W Tc |
| Element Configuration | Single |
| Power Dissipation | 34W |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 280m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1640pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 15A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 96nC @ 10V |
| Rise Time | 24ns |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 25 ns |
| Turn-Off Delay Time | 48 ns |
| Continuous Drain Current (ID) | 15A |
| Gate to Source Voltage (Vgs) | 4V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
