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SIHF22N60E-E3

MOSFET N-CH 600V 21A TO220


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SIHF22N60E-E3
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 364
  • Description: MOSFET N-CH 600V 21A TO220 (Kg)

Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Supplier Device Package TO-220 Full Pack
Packaging Tube
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 180mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 227W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 227W
Turn On Delay Time 18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1920pF @ 100V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Rise Time 68ns
Drain to Source Voltage (Vdss) 600V
Fall Time (Typ) 54 ns
Turn-Off Delay Time 59 ns
Continuous Drain Current (ID) 21A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Input Capacitance 1.92nF
Drain to Source Resistance 180mOhm
Rds On Max 180 mΩ
Height 16.12mm
Length 10.63mm
Width 4.83mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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