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SIHF6N65E-GE3

Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220 Full-Pak


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SIHF6N65E-GE3
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 473
  • Description: Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220 Full-Pak (Kg)

Details

Tags

Parameters
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 31W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 31W
Case Connection ISOLATED
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 820pF @ 100V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 7A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7A
Drain-source On Resistance-Max 0.6Ohm
Drain to Source Breakdown Voltage 650V
Avalanche Energy Rating (Eas) 56 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
See Relate Datesheet

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