Parameters | |
---|---|
Power Dissipation | 292W |
Turn On Delay Time | 80 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 270m Ω @ 10A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2942pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 20A Tc |
Gate Charge (Qg) (Max) @ Vgs | 76nC @ 10V |
Rise Time | 27ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 44 ns |
Turn-Off Delay Time | 32 ns |
Continuous Drain Current (ID) | 20A |
Threshold Voltage | 5V |
JEDEC-95 Code | TO-247AC |
Gate to Source Voltage (Vgs) | 30V |
Drain-source On Resistance-Max | 0.27Ohm |
Drain to Source Breakdown Voltage | 500V |
Pulsed Drain Current-Max (IDM) | 80A |
Nominal Vgs | 5 V |
Radiation Hardening | No |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Weight | 38.000013g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2017 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 250W Tc |
Operating Mode | ENHANCEMENT MODE |