SIHG22N50D-GE3
| Parameters | |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 1938pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 22A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 98nC @ 10V |
| Rise Time | 42ns |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 40 ns |
| Turn-Off Delay Time | 47 ns |
| Continuous Drain Current (ID) | 22A |
| Threshold Voltage | 3V |
| JEDEC-95 Code | TO-247AC |
| Gate to Source Voltage (Vgs) | 30V |
| Pulsed Drain Current-Max (IDM) | 67A |
| DS Breakdown Voltage-Min | 500V |
| Height | 20.82mm |
| Length | 15.87mm |
| Width | 5.31mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 38.000013g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2012 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 312W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 312W |
| Case Connection | DRAIN |
| Turn On Delay Time | 21 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 230m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
See Relate Datesheet
