SIHG44N65EF-GE3
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | E |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Technology | MOSFET (Metal Oxide) |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 417W Tc |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 73m Ω @ 22A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5892pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 46A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 278nC @ 10V |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| JEDEC-95 Code | TO-247AC |
| Drain Current-Max (Abs) (ID) | 46A |
| Drain-source On Resistance-Max | 0.073Ohm |
| Pulsed Drain Current-Max (IDM) | 154A |
| DS Breakdown Voltage-Min | 650V |
| Avalanche Energy Rating (Eas) | 596 mJ |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
