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SIHH26N60E-T1-GE3

VISHAY SIHH26N60E-T1-GE3 Power MOSFET, N Channel, 25 A, 600 V, 0.117 ohm, 10 V, 4 V


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SIHH26N60E-T1-GE3
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 751
  • Description: VISHAY SIHH26N60E-T1-GE3 Power MOSFET, N Channel, 25 A, 600 V, 0.117 ohm, 10 V, 4 V (Kg)

Details

Tags

Parameters
Pulsed Drain Current-Max (IDM) 50A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 353 mJ
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PSSO-N4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 202W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 135m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2815pF @ 100V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Gate Charge (Qg) (Max) @ Vgs 116nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 25A
Threshold Voltage 4V
Drain-source On Resistance-Max 0.135Ohm
See Relate Datesheet

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