SIHJ10N60E-T1-GE3
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | E |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Technology | MOSFET (Metal Oxide) |
| Number of Channels | 1 |
| Power Dissipation-Max | 89W Tc |
| Power Dissipation | 89W |
| Turn On Delay Time | 16 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 360m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 784pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 10A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Turn-Off Delay Time | 31 ns |
| Continuous Drain Current (ID) | 10A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 600V |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.267mm |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
