SIHP18N50C-E3
| Parameters | |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 223W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 223W |
| Case Connection | DRAIN |
| Turn On Delay Time | 80 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 270m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2942pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 18A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 76nC @ 10V |
| Rise Time | 27ns |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 44 ns |
| Turn-Off Delay Time | 32 ns |
| Continuous Drain Current (ID) | 18A |
| Threshold Voltage | 5V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 30V |
| Pulsed Drain Current-Max (IDM) | 72A |
| DS Breakdown Voltage-Min | 500V |
| Nominal Vgs | 5 V |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 6.000006g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2011 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Resistance | 270mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Powers |
See Relate Datesheet
