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SIHP25N60EFL-GE3

MOSFET N-CH 600V 25A TO220AB


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SIHP25N60EFL-GE3
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 613
  • Description: MOSFET N-CH 600V 25A TO220AB (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2017
Series E
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 250W Tc
Power Dissipation 250W
Turn On Delay Time 25 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 146m Ω @ 12.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2274pF @ 100V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 25A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Max Junction Temperature (Tj) 150°C
Height 19.31mm
RoHS Status ROHS3 Compliant
See Relate Datesheet

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