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SIHP5N50D-E3

MOSFET 500V 1.5ohm@10V 5.3A N-Ch D-SRS


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SIHP5N50D-E3
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 133
  • Description: MOSFET 500V 1.5ohm@10V 5.3A N-Ch D-SRS (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 104W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 104W
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 325pF @ 100V
Current - Continuous Drain (Id) @ 25°C 5.3A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 11ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 5.3A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
DS Breakdown Voltage-Min 500V
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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